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NTTFS4928NTWG Datasheet(PDF) 1 Page - ON Semiconductor |
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NTTFS4928NTWG Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 2011 May, 2011 − Rev. 0 1 Publication Order Number: NTTFS4928N/D NTTFS4928N Power MOSFET 30 V, 37 A, Single N−Channel, m8FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • DC−DC Converters • Power Load Switch • Notebook Battery Management • Motor Control MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJA (Note 1) Steady State TA = 25°C ID 11.8 A TA = 85°C 8.5 Power Dissipation RqJA (Note 1) TA = 25°C PD 2.12 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 15.9 A TA = 85°C 11.5 Power Dissipation RqJA ≤ 10 s (Note 1) TA = 25°C PD 3.86 W Continuous Drain Current RqJA (Note 2) TA = 25°C ID 7.3 A TA = 85°C 5.2 Power Dissipation RqJA (Note 2) TA = 25°C PD 0.81 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 37 A TC = 85°C 27 Power Dissipation RqJC (Note 1) TC = 25°C PD 20.8 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 160 A Operating Junction and Storage Temperature TJ, Tstg −55 to +150 °C Source Current (Body Diode) IS 20 A Drain to Source dV/dt dV/dt 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 20 Apk, L = 0.1 mH, RG = 25 W) EAS 20 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. ORDERING INFORMATION http://onsemi.com Device Package Shipping† V(BR)DSS RDS(on) MAX ID MAX 30 V 9.0 mW @ 10 V 37 A N−Channel MOSFET D (5−8) S (1,2,3) G (4) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. WDFN8 (m8FL) CASE 511AB MARKING DIAGRAM 13.5 mW @ 4.5 V NTTFS4928NTAG WDFN8 (Pb−Free) 1500 / Tape & Reel (Note: Microdot may be in either location) 1 4928 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package 1 NTTFS4928NTWG WDFN8 (Pb−Free) 5000 / Tape & Reel 4928 AYWWG G D D D D S S S G |
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