NTMS4916N datasheet(1/5 Pages) ONSEMI

Part #	NTMS4916N

Description	Power MOSFET 30 V, 11.6 A, N?묬hannel, SO?? Low RDS(on) to Minimize Conduction Losses

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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April, 2010 − Rev. 0

1

Publication Order Number:

NTMS4916N/D

NTMS4916N

Power MOSFET

30 V, 11.6 A, N−Channel, SO−8

Features

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• Optimized for 5 V, 12 V Gate Drives

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• DC−DC Converters

• Printers

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJA (Note 1)

Steady

State

TA = 25°C

ID

9.4

A

TA = 70°C

7.5

Power Dissipation RqJA

(Note 1)

Steady

State

TA = 25°C

PD

1.30

W

Continuous Drain

Current RqJA (Note 2)

Steady

State

TA = 25°C

ID

7.8

A

TA = 70°C

6.2

Power Dissipation RqJA

(Note 2)

TA = 25°C

PD

0.89

W

Continuous Drain

Current RqJA, t v 10 s

(Note 1)

Steady

State

TA = 25°C

ID

11.6

A

TA = 70°C

9.3

Power Dissipation

RqJA, t v 10 s(Note 1)

Steady

State

TA = 25°C

PD

1.98

W

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

145

A

Operating Junction and Storage Temperature

TJ,

Tstg

−55 to

150

°C

Source Current (Body Diode)

IS

2.5

A

Single Pulse Drain−to−Source Avalanche Energy

(TJ = 25°C, VDD = 30 V, VGS = 10 V,

IL = 9 Apk, L = 1.0 mH, RG = 25 W)

EAS

40.5

mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Ambient – Steady State (Note 1)

RqJA

96

°C/W

Junction−to−Ambient – t v 10 s (Note 1)

RqJA

63

Junction−to−Foot (Drain)

RqJF

24.5

Junction−to−Ambient – Steady State (Note 2)

RqJA

141

1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu.

2. Surfacemounted on FR4 board using the minimum recommended pad size.

http://onsemi.com

Device

Package

Shipping†

ORDERING INFORMATION

V(BR)DSS

RDS(ON) MAX

ID MAX

30 V

9 mW @ 10 V

11.6 A

N−Channel

D

S

G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

SO−8

CASE 751

STYLE 12

MARKING DIAGRAM/

PIN ASSIGNMENT

1

12 mW @ 4.5 V

NTMS4916NR2G

SO−8

(Pb−Free)

2500/Tape & Reel

4916N = Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

18

Drain

Source

Gate

Top View

(Note: Microdot may be in either location)

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