IPA90R800C3 datasheet(1/10 Pages) INFINEON

Part #	IPA90R800C3

Description	CoolMOS Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPA90R800C3

CoolMOS

™ Power Transistor

Features

• Lowest figure-of-merit RON x Qg

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

1) for target applications

• Pb-free lead plating; RoHS compliant

• Ultra low gate charge

CoolMOS™ 900V is designed for:

• Quasi Resonant Flyback / Forward topologies

• PC Silverbox and consumer applications

• Industrial SMPS

Maximum ratings, at T J=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

2)

I D

T C=25 °C

A

T C=100 °C

Pulsed drain current

3)

I D,pulse

T C=25 °C

Avalanche energy, single pulse

E AS

I D=1.4 A, V DD=50 V

157

mJ

Avalanche energy, repetitive t AR

3),4)

E AR

I D=1.4 A, V DD=50 V

Avalanche current, repetitive t AR

3),4)

I AR

A

MOSFET dv /dt ruggedness

dv /dt

V DS=0...400 V

V/ns

Gate source voltage

V GS

static

V

AC (f>1 Hz)

Power dissipation

P tot

T C=25 °C

W

Operating and storage temperature

T J, T stg

°C

Mounting torque

M2.5 screws

50

Ncm

Value

6.9

4.4

15

±30

33

-55 ... 150

0.46

1.4

50

±20

V DS @ T J=25°C

900

V

R DS(on),max @ T J= 25°C

0.8

Ω

Q g,typ

42

nC

Product Summary

Type

Package

Marking

IPA90R800C3

PG-TO220 FP

9R800C

PG-TO220 FP

Rev. 1.0

page 1

2008-07-30

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