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IPB60R299CPA Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IPB60R299CPA Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 11 page IPB60R299CPA 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=6.6 A pulsed I F=f(V SD) parameter: V DD parameter: T j 11 Avalanche energy 12 Drain-source breakdown voltage E AS=f(T j); I D=4.4 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 25 °C 150 °C 25 °C, 98% 150 °C, 98% 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 V SD [V] 120 V 400 V 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 Q gate [nC] 540 580 620 660 700 -60 -20 20 60 100 140 180 T j [°C] 0 100 200 300 25 75 125 175 T j [°C] Rev. 2.0 page 6 2009-09-09 |
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