IPB120P04P4-04 datasheet(3/9 Pages) INFINEON

Part #	IPB120P04P4-04

Description	OptiMOS-P2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 9 page

IPB120P04P4-04

IPI120P04P4-04, IPP120P04P4-04

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Dynamic characteristics

2)

Input capacitance

C iss

-

11380

14790 pF

Output capacitance

C oss

-

3410

4430

Reverse transfer capacitance

Crss

-

90

180

Turn-on delay time

t d(on)

-

30

-

ns

Rise time

t r

-

20

-

Turn-off delay time

t d(off)

-

49

-

Fall time

t f

-

52

-

Gate Charge Characteristics

2)

Gate to source charge

Q gs

-

62

80

nC

Gate to drain charge

Q gd

-

30

60

Gate charge total

Q g

-

158

205

Gate plateau voltage

V plateau

-

-5.3

-

V

Reverse Diode

Diode continous forward current

2)

I S

-

-120

A

Diode pulse current

2)

I S,pulse

-

-480

Diode forward voltage

V SD

V GS=0V, I F=-100A,

T j=25°C

-

-1

-1.3

V

Reverse recovery time

2)

t rr

-

69

-

ns

Reverse recovery charge

2)

Q rr

-

95

-

nC

T C=25°C

Values

V GS=0V, V DS=-25V,

f =1MHz

V DD=-20V,

V GS=-10V, I D=-120A,

R G=3.5W

V DD=-32V,

I D=-120A,

V GS=0 to -10V

V R=-20V, I F=-50A,

di F/dt =-100A/µs

2) Defined by design. Not subject to production test.

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1) Current is limited by bondwire; with an R

thJC = 1.1K/W the chip is able to carry -155A at 25°C.

Rev. 1.0

page 3

2011-02-14

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IPB120P04P4-04 Datasheet(PDF) 3 Page - Infineon Technologies AG

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