BUL72A datasheet(1/2 Pages) SEME-LAB

Part #	BUL72A

Description	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

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Manufacturer	SEME-LAB [Seme LAB]

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BUL72A

LAB

SEME

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 2/97

ADVANCED

DISTRIBUTED BASE DESIGN

HIGH VOLTAGE

HIGH SPEED NPN

SILICON POWER TRANSISTOR

• SEMEFAB DESIGNED AND DIFFUSED DIE

• HIGH VOLTAGE

• FAST SWITCHING

• HIGH ENERGY RATING

Designed for use in

electronic ballast applications

FEATURES

• Multi–base for efficient energy distribution

across the chip resulting in significantly

improved switching and energy ratings

across full temperature range.

• Ion implant and high accuracy masking for

tight control of characteristics from batch to

batch.

• Triple Guard Rings for improved control of

high voltages.

VCBO

Collector – Base Voltage(IE=0)

VCEO

Collector – Emitter Voltage (IB = 0)

VEBO

Emitter – Base Voltage (IC = 0)

IC

Continuous Collector Current

IC(PK)

Peak Collector Current

IB

Base Current

Ptot

Total Dissipation at Tcase = 25°C

Tstg

Operating and Storage Temperature Range

350V

160V

10V

7A

12A

2A

2W

–55 to +150°C

MECHANICAL DATA

Dimensions in mm

0.32

0.24

0.10

0.02

13°

16°

max.

1.70

max.

10°

max.

6.7

6.3

3.1

2.9

3.7

3.3

7.3

6.7

1.05

0.85

2.30

0.80

0.60

4.60

12

3

4

Pin 1 - Base

Pin 2 - Collector

Pin 3 - Emitter

Pin 4 - Collector

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

SOT-223

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