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IPI60R099CP Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPI60R099CP Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 10 page IPI60R099CP Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 2800 - pF Output capacitance C oss - 130 - Effective output capacitance, energy related 5) C o(er) - 130 - Effective output capacitance, time related 6) C o(tr) - 340 - Turn-on delay time t d(on) -10- ns Rise time t r -5 - Turn-off delay time t d(off) -60- Fall time t f -5 - Gate Charge Characteristics Gate to source charge Q gs -14- nC Gate to drain charge Q gd -20- Gate charge total Q g -60 80 Gate plateau voltage V plateau - 5.0 - V Reverse Diode Diode forward voltage V SD V GS=0 V, I F=18 A, T j=25 °C - 0.9 1.2 V Reverse recovery time t rr - 450 - ns Reverse recovery charge Q rr -12- µC Peak reverse recovery current I rrm -70- A 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max Values V GS=0 V, V DS=100 V, f =1 MHz V DD=400 V, V GS=10 V, I D=18 A, R G=3.3 Ω V DD=400 V, I D=18 A, V GS=0 to 10 V V GS=0 V, V DS=0 V to 480 V 4) I SD≤ID, di/dt≤100A/µs,VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch V R=400 V, I F=I S, di F/dt =100 A/µs 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f. Rev. 2.0 page 3 2008-02-19 |
Similar Part No. - IPI60R099CP_08 |
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Similar Description - IPI60R099CP_08 |
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