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IPP65R660CFD Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IPP65R660CFD Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 20 page drain pin 2 gate pin 1 source pin 3 650V CoolMOS™ CFD Power Transistor IPD65R660CFD IPB65R660CFD, IPP65R660CFD IPA65R660CFD Final Data Sheet 2 Rev. 2.0, 2011-02-01 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter, and cooler Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Easy to use/drive • Qualified for industrial grade applications according to JEDEC1) • Pb-free plating, Halogen free mold compound Applications 650V CoolMOS™ CFD is especially suitable for resonant switching PWM stages for e.g. PC Silverbox, LCD TV, Lighting, Server,Telecom. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. 1) J-STD20 and JESD22 Table 1 Key Performance Parameters Parameter Value Unit V DS @ Tj,max 700 V RDS(on),max 0.66 Q g,typ 20 nC I D,pulse 17 A E oss @ 400V 1.8 µJ Body diode d i/dt 500 A/µs Type / Ordering Code Package Marking Related Links IPD65R660CFD PG-TO252 IFX CoolMOS Webpage IPB65R660CFD PG-TO263 IFX Design tools IPP65R660CFD PG-TO220 65F660 IPA65R660CFD PG-TO220 FullPAK IPI65R660CFD PG-TO262 IPW65R660CFD PG-TO247 |
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