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IPP50R380CE Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # IPP50R380CE
Description  500V CoolMOS CE Power Transistor
Download  17 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPP50R380CE Datasheet(HTML) 7 Page - Infineon Technologies AG

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500V CoolMOS™ CE Power Transistor
IPx50R380CE
Electrical characteristics
Final Data Sheet
7
Rev. 2.0, 2010-08-27
Table 7
Gate charge characteristics
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
IGate to source charge
Q
gs
-4
-
nC
V
DD=480 V, ID=4.8 A,
V
GS=0 to 10 V
Gate to drain charge
Q
gd
-16
-
Gate charge total
Q
g
-32
-
Gate plateau voltage
V
plateau
-5.4
-
V
Table 8
Reverse diode characteristics
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Diode forward voltage
V
SD
-0.9
-
V
V
GS=0 V, IF=4.8A,
T
j=25 °C
Reverse recovery time
t
rr
-290
-
ns
V
R=400 V, IF=4.8 A,
d
i
F/dt=100 A/µs
(see table 22)
Reverse recovery charge
Q
rr
-3.3
-
µC
Peak reverse recovery current
I
rrm
-21
-
A


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