IPB055N03LG datasheet(1/10 Pages) INFINEON

Part #	IPB055N03LG

Description	OptiMOS3 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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Type

IPP055N03L G

IPB055N03L G

!"#$%!&

™

3 Power-Transistor

Features

• Fast switching MOSFET for SMPS

• Optimized technology for DC/DC converters

• Qualified according to JEDEC

1) for target applications

• N-channel, logic level

• Excellent gate charge x R DS(on) product (FOM)

• Very low on-resistance R DS(on)

• Avalanche rated

• Pb-free plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

V GS=10 V, T C=25 °C

50

A

V GS=10 V, T C=100 °C

50

V GS=4.5 V, T C=25 °C

50

V GS=4.5 V,

T C=100 °C

50

Pulsed drain current

2)

I D,pulse

T C=25 °C

350

Avalanche current, single pulse

3)

I AS

T C=25 °C

50

Avalanche energy, single pulse

E AS

I D=35 A, R GS=25 W

60

mJ

Reverse diode dv /dt

dv /dt

I D=50 A, V DS=24 V,

di /dt =200 A/µs,

T j,max=175 °C

6

kV/µs

Gate source voltage

V GS

±20

V

Value

1) J-STD20 and JESD22

V DS

30

V

R DS(on),max

5.5

m

W

I D

50

A

Product Summary

Type

IPP055N03L G

IPB055N03L G

Package

PG-TO220-3-1

PG-TO263-3

Marking

055N03L

Rev. 1.03

page 1

2009-09-22

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