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IPB055N03LG Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IPB055N03LG Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 10 page Type IPP055N03L G IPB055N03L G !"#$%!& ™ 3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC 1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D V GS=10 V, T C=25 °C 50 A V GS=10 V, T C=100 °C 50 V GS=4.5 V, T C=25 °C 50 V GS=4.5 V, T C=100 °C 50 Pulsed drain current 2) I D,pulse T C=25 °C 350 Avalanche current, single pulse 3) I AS T C=25 °C 50 Avalanche energy, single pulse E AS I D=35 A, R GS=25 W 60 mJ Reverse diode dv /dt dv /dt I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage V GS ±20 V Value 1) J-STD20 and JESD22 V DS 30 V R DS(on),max 5.5 m W I D 50 A Product Summary Type IPP055N03L G IPB055N03L G Package PG-TO220-3-1 PG-TO263-3 Marking 055N03L 055N03L Rev. 1.03 page 1 2009-09-22 |
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