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IPP60R520E6 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IPP60R520E6 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 16 page 600V CoolMOS ™ E6 Power Transistor IPx60R520E6 Electrical characteristics Final Data Sheet 6 Rev. 2.0, 2010-04-09 4 Electrical characteristics Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 5 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V (BR)DSS 600 - - V V GS=0 V, ID=0.25 mA Gate threshold voltage V GS(th) 2.5 3 3.5 V DS=VGS, ID=0.23mA Zero gate voltage drain current I DSS - - 1 µA V DS=600 V, VGS=0 V, T j=25 °C - 10 - V DS=600 V, VGS=0 V, T j=150 °C Gate-source leakage current I GSS - - 100 nA V GS=20 V, VDS=0 V Drain-source on-state resistance R DS(on) - 0.47 0.52 ! V GS=10 V, ID=2.8 A, T j=25 °C - 1.22 - V GS=10 V, ID=2.8A, T j=150 °C Gate resistance R G - 9 - ! f=1 MHz, open drain Table 6 Dynamic characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Input capacitance C iss - 512 - pF V GS=0 V, VDS=100 V, f=1 MHz Output capacitance C oss - 35 - Effective output capacitance, energy related1) 1) C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS C o(er) - 23 - V GS=0 V, V DS=0...480 V Effective output capacitance, time related2) 2) C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS C o(tr) - 100 - I D=constant, VGS=0 V V DS=0...480V Turn-on delay time t d(on) - 12 - ns V DD=400 V, V GS=13 V, ID=3.5 A, R G= 6.8 ! (see table 20) Rise time t r - 10 - Turn-off delay time t d(off) - 75 - Fall time t f - 9 - |
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