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IPP60R520E6 Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # IPP60R520E6
Description  600V CoolMOS E6 Power Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPP60R520E6 Datasheet(HTML) 6 Page - Infineon Technologies AG

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600V CoolMOS
™ E6 Power Transistor
IPx60R520E6
Electrical characteristics
Final Data Sheet
6
Rev. 2.0, 2010-04-09
4
Electrical characteristics
Electrical characteristics, at
Tj=25 °C, unless otherwise specified.
Table 5
Static characteristics
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Drain-source breakdown voltage
V
(BR)DSS
600
-
-
V
V
GS=0 V, ID=0.25 mA
Gate threshold voltage
V
GS(th)
2.5
3
3.5
V
DS=VGS, ID=0.23mA
Zero gate voltage drain current
I
DSS
-
-
1
µA
V
DS=600 V, VGS=0 V,
T
j=25 °C
-
10
-
V
DS=600 V, VGS=0 V,
T
j=150 °C
Gate-source leakage current
I
GSS
-
-
100
nA
V
GS=20 V, VDS=0 V
Drain-source on-state resistance
R
DS(on)
-
0.47
0.52
!
V
GS=10 V, ID=2.8 A,
T
j=25 °C
-
1.22
-
V
GS=10 V, ID=2.8A,
T
j=150 °C
Gate resistance
R
G
-
9
-
!
f=1 MHz, open drain
Table 6
Dynamic characteristics
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Input capacitance
C
iss
-
512
-
pF
V
GS=0 V, VDS=100 V,
f=1 MHz
Output capacitance
C
oss
-
35
-
Effective output capacitance,
energy related1)
1)
C
o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
C
o(er)
-
23
-
V
GS=0 V,
V
DS=0...480 V
Effective output capacitance, time
related2)
2)
C
o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
C
o(tr)
-
100
-
I
D=constant, VGS=0 V
V
DS=0...480V
Turn-on delay time
t
d(on)
-
12
-
ns
V
DD=400 V,
V
GS=13 V, ID=3.5 A,
R
G= 6.8 !
(see table 20)
Rise time
t
r
-
10
-
Turn-off delay time
t
d(off)
-
75
-
Fall time
t
f
-
9
-


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