Data Sheet

1 of 11

Rev. 03, 2009-04-21

PTFA041501GL

PTFA041501HL

Confidential, Limited Internal Distribution

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Description

The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs

designed for ultra-linear CDMA power amplifier applications. They

are available in thermally-enhanced plastic open-cavity packages

with copper flanges. Manufactured with Infineon's advanced LDMOS

process, these devices provide excellent thermal performance and

superior reliability.

PTFA041501GL

Package PG-63248-2

Thermally-Enhanced High Power RF LDMOS FETs

150 W, 420 – 500 MHz

RF Characteristics

Infineon test fixture)

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

—

21

—

dB

Drain Efficiency

—

41

—

%

Adjacent Channel Power Ratio

ACPR

—

–33

—

dB

PTFA041501HL

Package PG-64248-2

Features

• Thermally-enhanced plastic open-cavity (EPOC™)

packages with copper flanges, Pb-free and RoHS-

compliant

• Broadband internal matching

• Typical CDMA performance at 470 MHz, 28 V

- Average output power = 60 W

- Linear Gain = 21 dB

- Efficiency = 41%

• Typical CW performance, 470 MHz, 28 V

- Output power at P–1dB = 175 W

- Efficiency = 62%

• Integrated ESD protection: Human Body Model,

Class 1 (minimum)

• Excellent thermal stability

• Low HCI drift

• Capable of handling 10:1 VSWR @ 28 V,

150 W (CW) output power

Single-carrier CDMA IS-95 Performance

-75

-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

36

38

40

42

44

46

48

Average Output Power (dBm)

0

5

10

15

20

25

30

35

40

45

Efficiency

ACPR

–15°C

25°C

90°C

ALT

*See Infineon distributor for future availability.