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PTFA041501HL Datasheet(PDF) 1 Page - Infineon Technologies AG |
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PTFA041501HL Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 11 page Data Sheet 1 of 11 Rev. 03, 2009-04-21 PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They are available in thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA041501GL Package PG-63248-2 Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz RF Characteristics Single-carrier CDMA IS-95 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 60 W average, ƒ = 470 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 21 — dB Drain Efficiency ηD — 41 — % Adjacent Channel Power Ratio ACPR — –33 — dB PTFA041501HL Package PG-64248-2 Features • Thermally-enhanced plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and RoHS- compliant • Broadband internal matching • Typical CDMA performance at 470 MHz, 28 V - Average output power = 60 W - Linear Gain = 21 dB - Efficiency = 41% • Typical CW performance, 470 MHz, 28 V - Output power at P–1dB = 175 W - Efficiency = 62% • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power Single-carrier CDMA IS-95 Performance VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 36 38 40 42 44 46 48 Average Output Power (dBm) 0 5 10 15 20 25 30 35 40 45 Efficiency ACPR –15°C 25°C 90°C ALT *See Infineon distributor for future availability. |
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