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PTFA081501F Datasheet(PDF) 1 Page - Infineon Technologies AG |
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PTFA081501F Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 10 page Data Sheet 1 of 10 Rev. 03, 2007-03-09 All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! PTFA081501E PTFA081501F Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultra- linear applications. They are characaterized for CDMA and CDMA2000 operation from 864 to 900 MHz. Thermally-enhanced packages provide the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA081501E Package H-30248-2 Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz IS-95 CDMA Performance VDD = 28 V, IDQ = 950 mA, ƒ = 900 MHz 0 10 20 30 40 50 32 34 36 38 40 42 44 46 48 Output Power (dBm), Avg. -80 -70 -60 -50 -40 -30 TCASE = 25°C TCASE = 90°C Efficiency Alt1 1.98 MHz Adj 750 kHz RF Characteristics CDMA2000 3-Carrier Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 950 mA, POUT = 35 W average, ƒ = 900 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 18 — dB Drain Efficiency ηD — 34 — % Adjacent Channel Power Ratio ACPR — –50 — dBc PTFA081501F Package H-31248-2 Features • Thermally-enhanced packages, Pb-free and RoHS-compliant • Broadband internal matching • Typical CDMA2000 performance at 900 MHz, 28 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power = –50 dBc • Typical CW performance, 900 MHz, 28 V - Output power at P–1dB = 165 W - Efficiency = 62% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 170 W (CW) output power *See Infineon distributor for future availability. |
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