PTFA211801E_11 datasheet(5/9 Pages) INFINEON

Part #	PTFA211801E

Description	Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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5 / 9 page

PTFA211801E

Confidential, Limited Internal Distribution

Data Sheet

5 of 9

Rev. 06, 2011-01-11

0.1

0.3

0.2

0.4

0.35

0.40

Nornalized to 50 Ohms

a211801ef

ga211801ef Apr. 5, 2005 3:16:59 PM

Z Load

Z Source

2210 MHz

2070 MHz

Broadband Circuit Impedance

Frequency

Z Source W

Z Load W

MHz

R

jX

R

jX

2070

7.2

–0.5

1.5

2.3

2110

7.8

–0.2

1.4

2.6

2140

8.4

–0.0

1.4

2.8

2170

9.1

0.0

1.4

3.0

2210

10.0

–0.2

1.3

3.4

Typical Performance (cont.)

Z0 = 50 W

Z Source

Z Load

G

S

D

0

5

10

15

20

25

30

35

-50

-45

-40

-35

-30

34

36

38

40

42

44

46

48

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 28 V, IDQ = 1.2 A, ƒ = 2140 MHz,

3GPP WCDMA signal, TM1 w/16 DPCH, 67%

clipping, PAR = 8.5 dB, 3.84 MHz BW

Efficiency

Gain

ACPR Up

ACPR Low

10

15

20

25

30

35

40

45

-45

-40

-35

-30

-25

-20

-15

-10

23 24 25 26 27 28 29 30 31 32 33

Supply Voltage (V)

Voltage Sweep

IDQ = 1.2 A, ƒ = 2140 MHz, POUT = 51 dBm PEP,

tone spacing = 1 MHz

Gain

Efficiency

IM3 Up

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