PTFB182503EL datasheet(1/12 Pages) INFINEON

Part #	PTFB182503EL

Description	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805-1880 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet

1 of 12

Rev. 06, 2010-11-09

PTFB182503EL

PTFB182503FL

Confidential, Limited Internal Distribution

5

10

15

20

25

30

35

-55

-50

-45

-40

-35

-30

38

40

42

44

46

48

50

Average Output Power (dBm)

Two-carrier WCDMA Drive-up

VDD = 30 V, IDQ = 1.85 A, ƒ = 1842 MHz, 3GPP

WCDMA signal, PAR = 7.5 dB,

10 MHz carrier spacing

ACPR

IM3

Efficiency

RF Characteristics

Two-carrier WCDMA Specifications (tested in Infineon test fixture)

VDD = 30 V, IDQ = 1.85 A, POUT = 50 W average

ƒ1 = 1840 MHz, ƒ2 = 1845 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 7.5 dB @ 0.01% CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

18

19

—

dB

Drain Efficiency

hD

27

28

—

%

Intermodulation Distortion

IMD

—

–35

–31

dBc

Thermally-Enhanced High Power RF LDMOS FETs

240 W, 1805 – 1880 MHz

Description

The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs

intended for use in multi-standard cellular power amplifier applications

in the 1805 to 1880 MHz frequency band. Features include input

and output matching, high gain, wide signal bandwidth and reduced

memory effects for improved DPD correctability. Manufactured with

Infineon's advanced LDMOS process, these devices provide excellent

thermal performance and superior reliability.

PTFB182503EL

H-33288-6

Features

• Broadband internal input and output matching

• Enhanced for use in DPD error correction systems

• Typical two-carrier WCDMA performance,

1880 MHz, 30 V

- Average output power = 50 W

- Linear gain = 19 dB

- Drain efficiency = 28 %

- Intermodulation distortion = –35 dBc

• Typical CW performance, 1880 MHz, 30 V

- Output power at P1dB = 240 W

- Efficiency = 55%

• Increased negative gate-source voltage range for

improved performance in Doherty peaking amplifiers

• Integrated ESD protection. Human Body Model,

Class 2 (minimum)

• Capable of handling 10:1 VSWR @ 30 V, 240 W

(CW) output power

• Pb-free, RoHS-compliant

PTFB182503FL

H-34288-4/2

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PTFB182503EL Datasheet(PDF) 1 Page - Infineon Technologies AG

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