PTFB182503FL datasheet(4/12 Pages) INFINEON

Part #	PTFB182503FL

Description	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805-1880 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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4 / 12 page

Data Sheet

4 of 12

Rev. 06, 2010-11-09

PTFB182503EL

PTFB182503FL

Confidential, Limited Internal Distribution

0.1

0.3

0.2

0.4

Nornalized to 50 Ohms

b182503-v1efl-v1

gb182503eflV1 July 29, 2009 6:57:48 PM

Z Load

1780 2.99 -2

1800 2.95 -2

1820 2.89 -2

1840 2.84 -1

1860 2.8 -1.7

1880 2.78 -1

1900 2.74 -1

1920 2.72 -1

Z Source

1920 MHz

1780 MHz

Z0 = 50 W

10

20

30

40

50

-50

-40

-30

-20

-10

23

25

27

29

31

33

Supply Voltage (V)

Voltage Sweep

IDQ = 1850 mA, ƒ = 1842 MHz, tone spacing =

1 MHz, Output Power (PEP) = 53 dBm

Gain

Efficiency

IM3 Up

15

25

35

45

55

65

14

15

16

17

18

19

0

40

80

120

160

200

240

Output Power (W)

Power Sweep, CW Conditions

VDD = 30 V, IDQ = 1850 mA, ƒ = 1842 MHz

Gain

TCASE = 25°C

TCASE = 90°C

Efficiency

Z Source

Z Load

G

S

D

Broadband Circuit Impedance

Frequency

Z Source W

Z Load W

MHz

R

jX

R

jX

1780

2.99

–2.48

1.33

–0.49

1800

2.95

–2.30

1.33

–0.38

1820

2.89

–2.13

1.31

–0.27

1840

2.84

–1.96

1.29

–0.16

1860

2.80

–1.76

1.29

–0.02

1880

2.78

–1.58

1.28

0.10

1900

2.74

–1.39

1.29

0.23

1920

2.72

–1.21

1.29

0.36

Typical Performance (cont.)

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PTFB182503FL Datasheet(PDF) 4 Page - Infineon Technologies AG

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