PTFB192503EL datasheet(3/15 Pages) INFINEON

Part #	PTFB192503EL

Description	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930-1990 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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PTFB192503EL

PTFB192503FL

Confidential, Limited Internal Distribution

Data Sheet

3 of 15

Rev. 09, 2010-11-09

Typical Performance (data taken in a production test fixture)

-60

-55

-50

-45

-40

-35

-30

-25

33

35

37

39

41

43

45

47

49

Output Power (dBm)

Two-carrier WCDMA 3GPP Drive-up

VDD = 30 V, IDQ = 1.85 A, 3GPP WCDMA,

PAR = 8:1, 10 MHz carrier spacing

BW 3.84 MHz

1990 Lower

1990 Upper

1960 Lower

1960 Upper

1930 Lower

1930 Upper

0

5

10

15

20

25

30

35

40

-60

-55

-50

-45

-40

-35

-30

-25

-20

33

35

37

39

41

43

45

47

49

Output Power (dBm)

Two-carrier WCDMA 3GPP Drive-up

VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz

3GPP WCDMA, PAR = 8:1,

10 MHz carrier spacing, BW 3.84 MHz

Efficiency

IMD Up

IMD Low

ACPR

5

15

25

35

45

55

65

14

15

16

17

18

19

20

38

40

42

44

46

48

50

52

54

Output Power (dBm)

Power Sweep, CW

Gain & Efficiency vs. Output Power

VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz

Efficiency

Gain

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

15

20

25

30

35

40

45

50

55

60

1890

1920

1950

1980

2010

Frequency (MHz)

Two-tone Broadband

Gain, Efficiency & Return Loss

vs. Frequency

VDD = 30 V, IDQ = 1.85 A, POUT = 110 W

Gain

Efficiency

RL

IMD3

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