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SGP30N60 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SGP30N60 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 12 page  SGP30N60 SGW30N60 1 Rev. 2.5 Nov. 09 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat) Tj Marking Package SGP30N60 600V 30A 2.5V 150 °C G30N60 PG-TO-220-3-1 SGW30N60 600V 30A 2.5V 150 °C G30N60 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current TC = 25°C TC = 100°C IC 41 30 Pulsed collector current, tp limited by Tjmax ICpuls 112 Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C - 112 A Gate-emitter voltage VGE ±20 V Avalanche energy, single pulse IC = 30 A, VCC = 50 V, RGE = 25 Ω, start at Tj = 25°C EAS 165 mJ Short circuit withstand time 2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C tSC 10 µs Power dissipation TC = 25°C Ptot 250 W Operating junction and storage temperature Tj , Tstg -55...+150 Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Ts 260 °C 1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. G C E PG-TO-220-3-1 PG-TO-247-3 |
Similar Part No. - SGP30N60_09 |
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Similar Description - SGP30N60_09 |
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