SPP11N80C3_08 datasheet(1/10 Pages) INFINEON

Part #	SPP11N80C3

Description	Cool MOS Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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SPP11N80C3

CoolMOS

TM Power Transistor

Features

• New revolutionary high voltage technology

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

1) for target applications

• Pb-free lead plating; RoHS compliant

• Ultra low gate charge

• Ultra low effective capacitances

CoolMOS

TM 800V designed for:

• Industrial application with high DC bulk voltage

• Switching Application (i.e. active clamp forward)

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

A

T C=100 °C

Pulsed drain current

2)

I D,pulse

T C=25 °C

Avalanche energy, single pulse

E AS

I D=2.2 A, V DD=50 V

470

mJ

Avalanche energy, repetitive t AR

2),3)

E AR

I D=11 A, V DD=50 V

Avalanche current, repetitive t AR

2),3)

I AR

A

MOSFET dv /dt ruggedness

dv /dt

V DS=0…640 V

V/ns

Gate source voltage

V GS

static

V

AC (f >1 Hz)

Power dissipation

P tot

T C=25 °C

W

Operating and storage temperature

T j, T stg

°C

Mounting torque

M3 and M3.5 screws

60

Ncm

±30

156

-55 ... 150

0.2

11

50

±20

Value

11

7.1

33

V DS

800

V

R DS(on)max @ Tj = 25°C

0.45

Ω

Q g,typ

64

nC

Product Summary

Type

Package

Marking

SPP11N80C3

PG-TO220-3

11N80C3

PG-TO220-3

Rev. 2.9

page 1

2008-10-15

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