SPP11N80C3 datasheet(6/10 Pages) INFINEON

Part #	SPP11N80C3

Description	Cool MOS Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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SPP11N80C3

9 Typ. gate charge

10 Forward characteristics of reverse diode

V GS=f(Q gate); I D=11 A pulsed

I F=f(V SD); t p=10 µs

parameter: V DD

parameter: T j

11 Avalanche energy

12 Drain-source breakdown voltage

E AS=f(T j); I D=2.2 A; V DD=50 V

V BR(DSS)=f(T j); I D=0.25 mA

25 °C

150 °C

150°C (98%)

25°C (98°C)

10

2

10

1

10

0

10

-1

0

0.5

1

1.5

2

V SD [V]

160 V

640 V

0

2

4

6

8

10

0

10

20

30

40

50

60

70

Q gate [nC]

680

720

760

800

840

880

920

960

-60

-20

20

60

100

140

180

T j [°C]

0

100

200

300

400

500

25

50

75

100

125

150

T j [°C]

Rev. 2.9

page 6

2008-10-15

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