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TLE6284G Datasheet(PDF) 11 Page - Infineon Technologies AG |
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TLE6284G Datasheet(HTML) 11 Page - Infineon Technologies AG |
11 / 17 page Data Sheet TLE6284G Data Sheet 11 Rev 2.4 2008-03-18 Estimation of power loss within the Driver IC The power loss within the Driver IC is strongly dependent on the use of the driver and the external components. Nevertheless a rough estimation of the worst case power loss is pos- sible. Worst case calculation is: PLoss = (Qgate*n*const* fPWM + IVS(open))* VVs - PRGate With: PLoss = Power loss within the Driver IC fPWM = Switching freqency Qgate = Total gate charge of used MOSFETs at 10V VGS n = Number of switched MOSFETs const = Constant considering some leakage current in the driver (about 1.2) IVS(open) = Current consumption of driver without connected Mosfets during switching VVS = Voltage at Vs PRGate = Power dissipation in the external gate resistors This value can be reduced dramatically by usage of external gate resistors. Conditions : Junction temperature Tj = 25 oC Number of switched MOSFET n = 2 Power dissipation in the external gate resistors PRGate = 0,2*PLoss Estimated Power Loss PLOSS within the Driver IC for different supply voltages Vs at QG = 100nC @ VGS = 10V 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0 10 203040 5060 PWM Frequency (kHz) Vs = 8V Vs = 14V Vs = 18V Estimated Power Loss PLOSS within the Driver IC for different gate charges QG at supply voltage Vs = 14V 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0 102030 4050 60 PWM Frequency (kHz) QG = 50nC QG = 100nC QG = 200nC |
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