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8550SST Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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8550SST Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente 8550SST -1.5A , -40V PNP Plastic Encapsulated Transistor 18-Feb-2011 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES General Purpose Switching and Amplification. CLASSIFICATION OF hFE (1) Product-Rank 8550SST-B 8550SST-C 8550SST-D Range 85~160 120~200 160~300 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -25 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -1.5 A Collector Power Dissipation PC 1 W Thermal Resistance From Junction to Ambient RθJA 125 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO -40 - - V IC= -0.1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -25 - - V IC= -0.1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -0.1mA, IC=0 Collector Cut-Off Current ICBO - - -0.1 μA VCB= -40V, IE=0 Collector Cut-Off Current ICEO - - -0.1 μA VCE= -20V, IB=0 Emitter Cut-Off Current IEBO - - -0.1 μA VEB= -5V, IC=0 hFE (1) 85 - 300 VCE= -1V, IC= -100mA DC Current Gain hFE (2) 40 - - VCE= -1V, IC= -800mA Collector to Emitter Saturation Voltage VCE(sat) - - -0.5 V IC= -800mA, IB= -80mA Base to Emitter Saturation Voltage VBE(sat) - - -1.2 V IC= -800mA, IB= -80mA Transition Frequency fT 100 - - MHz VCE= -10V, IC= -50mA, f=30MHz TO-92 Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G1.27 TYP. H1.10 - J 2.42 2.66 K 0.36 0.76 A C E K F D B G H J Emitter Collector Base |
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