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BC847PN Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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BC847PN Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 3 page  Elektronische Bauelemente BC847PN NPN - PNP Silicon Multi-Chip Transistor 20-Oct-2009 Rev. C Page 2 of 3 ABSOLUTE MAXIMUM RATINGS OF TR2 at Ta = 25°C PARAMETER SYMBOL VALUE UNITS Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -45 V Emitter to Base Voltage VEBO -5 V Collector Currrent – Continuous IC -100 mA Collector Power Dissipation PC 200 mW Junction Temperature RθJA 150 ℃ Storage Temperature TSTG -55 ~ -150 ℃ ELECTRICAL CHARACTERISTICS OF TR2 (PNP Transister) at Ta = 25°C CHARACTERISTIC TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage IC=-10μA, IE=0 V(BR)CBO -50 V Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0 V(BR)CEO -45 V Emitter=Base Breakdown Voltage IE=-1μA, IC=0 V(BR)EBO -5 V Collector Cutoff Current VCB=-30V, IE=0 ICBO -15 nA Emitter Cutoff Current VEB=-5V, IC=0 IEBO -15 nA DC Current Gain VCE=-5V, IC=-2mA hFE 220 475 IC=-10mA, IB=-0.5mA VCE(sat) -0.3 V Collector-emitter Saturation Voltage IC=-100mA, IB=-5mA VCE(sat) -0.65 V IC=-10mA, IB=-0.5mA VBE(sat) -0.7 V Base-Emitter Saturation Voltage IC=-100mA, IB=-5mA VBE(sat) -0.95 V IC=-2mA, VCE=-5V VBE(On) -0.6 -0.75 V Base-Emitter Voltage IC=-10mA, VCE=-5V VBE(On) -0.82 V Collector Output Capacitance VCB=-10V, IE=0, f=1MHz Cob 4.5 pF Transition Frequency VCE=-5V, IC=-10mA, f=100MHz fT 100 MHz Noise Figure VCE=-5V, IC=-0.2mA, f=1kHz Rg=2KΩ, △f=200Hz NF 10 dB CHARACTERISTIC CURVES |
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