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D1260 Datasheet(PDF) 1 Page - Seme LAB

Part # D1260
Description  METAL GATE RF SILICON FET
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Manufacturer  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

D1260 Datasheet(HTML) 1 Page - Seme LAB

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D1260UK
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
PD
Power Dissipation
BVDSS
Drain – Source Breakdown Voltage
BVGSS
Gate – Source Breakdown Voltage
ID(sat)
Drain Current
Tstg
Storage Temperature
Tj
Maximum Operating Junction Temperature
175W
40V
±20V
40A
–65 to 150°C
200°C
MECHANICAL DATA
B
C
A
D
(2 pls)
E
F
G
H
I
J
K
M
N
1
4
3
2
5
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
60W – 12.5V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
•LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
DT
PIN 1
SOURCE (COMMON)
PIN 3
SOURCE (COMMON)
PIN 5
DRAIN
PIN 2
GATE
PIN 4
SOURCE (COMMON)
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
mm
Tol.
Inches
Tol.
A
6.35 DIA
0.13
0.250 DIA
0.005
B
3.17 DIA
0.13
0.125 DIA
0.005
C
18.41
0.25
0.725
0.010
D
5.46
0.13
0.215
0.005
E
5.21
0.13
0.205
0.005
F
7.62
MAX
0.300
MAX
G
21.59
0.38
0.850
0.015
H
3.94
0.13
0.155
0.005
I
12.70
0.13
0.500
0.005
J
0.13
0.03
0.005
0.001
K
24.76
0.13
0.975
0.005
M
2.59
0.13
0.102
0.005
N
4.06
0.25
0.160
0.010


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