BC857B datasheet(1/3 Pages) SECOS

Part #	BC857B

Description	BC856A

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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Any changing of specification will not be informed individual

BC856A, B

BC857A, B, C

BC858A, B, C

General Purpose Transistor PNP Type

Collect current : - 0.1A

Operating Temp. : -55OC ~ +150OC

FEATURES

C OLLE C TOR

3

1

BAS E

2

E MITTE R

D

Top View

1

2

3

RoHS compliant product

n

Dim

Min

Max

A

2.800

3.040

B

1.200

1.400

C

0.890

1.110

D

0.370

0.500

G

1.780

2.040

H

0.013

0.100

J

0.085

0.177

K

0.450

0.600

L

0.890

1.020

S

2.100

2.500

V

0.450

0.600

All Dimension in mm

SOT-23

K

J

C

H

L

A

B S

G

V

3

1

2

http://www.SeCoSGmbH.com

Elektronische Bauelemente

ELECTRICAL

CHARACTERISTICS

Tamb=25

unless

otherwise

specified

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

BC856

BC857

BC858

VCBO

Ic= -10

A

I E=0

-80

-50

-30

V

Collector-emitter breakdown voltage

BC856

BC857

BC858

VCEO

Ic= -10 mA

IB=0

-65

-45

-30

V

Emitter-base breakdown voltage

VEBO

IE= -10

A

IC=0

-5

V

Collector cut-off current

BC856

BC857

BC858

ICBO

VCB= -70 V ,

IE=0

VCB= -45 V ,

IE=0

VCB= -25 V ,

IE=0

-0.1

A

Collector cut-off current

BC856

BC857

BC858

ICEO

VCE= -60 V ,

IB=0

VCE= -40 V ,

IB=0

VCE= -25 V ,

IB=0

-0.1

A

Emitter cut-off current

IEBO

V EB=-5V ,

IC=0

-0.1

A

DC current gain

BC856A,857A,858A

BC856B,857B,858B

BC857C,BC858C

HFE 1

VCE=-5V,

IC=-2mA

125

220

420

250

475

800

Collector-emitter saturation voltage

VCE(sat)

IC=-100mA,

IB= -5 mA

-0.5

V

Base-emitter saturation voltage

VBE(sat)

IC= -100 mA, IB= -5mA

-1.1

V

Transition frequency

fT

VCE=-5 V,

IC= -10mA

f=100MHz

100

MHz

DEVICE MARKING

BC856A=3A; BC856B=3B; BC857A=3E; BC857B=3F; BC857C=3G; BC858A=3J; BC858B=3K; BC858C=3L

01-Jun-200

4 Rev. B

Page 1 of 3

A suffix of "-C" specifies halogen & lead-free

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