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CDLL5520B Datasheet(PDF) 1 Page - Microsemi Corporation |
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CDLL5520B Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 2 page TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ZENER DIODE, 500mW – LEADLESS PACKAGE FOR SURFACE MOUNT – LOW REVERSE LEAKAGE CHARACTERISTICS – METALLURGICALLY BONDED Qualified per MIL-PRF-19500/437 LDS-0037 Rev. 1 (072304) Page 1 of 2 DEVICES 1N5518BUR-1 Thru 1N5546BUR-1 And CDLL5518 Thru CDLL5546D QUALIFIED LEVELS JAN JANTX JANTXV MAXIMUM RATING AT 25°C Junction and Storage Temperature: DC Power Dissipation: Power Derating: Forward Voltage @ 200mA: -65°C to +175°C 500mW @ TEC = +125°C 10mW / °C above TEC = +125°C 1.1 volts maximum ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) NOMINAL ZENER VOLTAGE ZENER TEST CURRENT MAX. ZENER IMPEDANCE B-C-D SUFFIX MAXIMUM REVERSE LEAKAGE CURRENT B-C-D SUFFIX MAIMUM DC ZENER REGULATION FACTOR CURRENT LOW VZ CURRENT VZ @ IZT (NOTE 2) IZT ZZT @ IZT (NOTE 3) IR (NOTE 4) VR = VOLTS IZM ΔV Z (NOTE 5) IZL TYPE NUMBER (NOTE 1) VOLTS mA Ohms μAdc NON & A- SUFFIX B-C-D- SUFFIX mA VOLTS mA CDLL5518B CDLL5519B CDLL5520B CDLL5521B CDLL5522B 3.3 3.6 3.9 4.3 4.7 20 20 20 20 10 26 24 22 18 22 5.0 3.0 1.0 3.0 2.0 0.90 0.90 0.90 1.0 1.5 1.0 1.0 1.0 1.5 2.0 115 105 98 88 81 0.90 0.90 0.85 0.75 0.60 2.0 2.0 2.0 2.0 1.0 CDLL5523B CDLL5524B CDLL5525B CDLL5526B CDLL5527B 5.1 5.6 6.2 6.8 7.5 5.0 3.0 1.0 1.0 1.0 26 30 30 30 35 2.0 2.0 1.0 1.0 0.5 2.0 3.0 4.5 5.5 6.0 2.5 3.5 5.0 6.2 6.8 75 68 61 56 51 0.65 0.30 0.20 0.10 0.05 0.25 0.25 0.01 0.01 0.01 CDLL5528B CDLL5529B CDLL5530B CDLL5531B CDLL5532B 8.2 9.1 10.0 11.0 12.0 1.0 1.0 1.0 1.0 1.0 40 45 60 80 90 0.5 0.1 0.05 0.05 0.05 6.5 7.0 8.0 9.0 9.5 7.5 8.2 9.1 9.9 10.8 46 42 38 35 32 0.05 0.05 0.10 0.20 0.20 0.01 0.01 0.01 0.01 0.01 CDLL5533B CDLL5534B CDLL5535B CDLL5536B CDLL5537B 13.0 14.0 15.0 16.0 17.0 1.0 1.0 1.0 1.0 1.0 90 100 100 100 100 0.01 0.01 0.01 0.01 0.01 10.5 11.5 12.5 13.0 14.0 11.7 12.6 13.5 14.4 15.3 29 27 25 24 22 0.20 0.20 0.20 0.20 0.20 0.01 0.01 0.01 0.01 0.01 MILLIMETERS INCHES DIM MIN MAX MIN MAX D 1.60 1.70 0.063 0.067 F 0.41 0.55 0.016 0.022 G 3.30 3.70 .130 .146 G1 2.54 REF. .100 REF. S 0.03 MIN .001 MIN FIGURE 1 DESIGN DATA CDLL5538B CDLL5539B CDLL5540B CDLL5541B CDLL5542B 18.0 19.0 20.0 22.0 24.0 1.0 1.0 1.0 1.0 1.0 100 100 100 100 100 0.01 0.01 0.01 0.01 0.01 15.0 16.0 17.0 18.0 20.0 16.2 17.1 18.0 19.8 21.6 21 20 19 17 16 0.20 0.20 0.20 0.25 0.30 0.01 0.01 0.01 0.01 0.01 CASE: DO-213AA, Hermetically sealed glass case. (MELF, SOD-80, LL34) CDLL5543B CDLL5544B CDLL5545B CDLL5546B 25.0 28.0 30.0 33.0 1.0 1.0 1.0 1.0 100 100 100 100 0.01 0.01 0.01 0.01 21.0 23.0 24.0 28.0 22.4 25.2 27.0 29.7 15 14 13 12 0.35 0.40 0.45 0.50 0.01 0.01 0.01 0.01 0.01 LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (RθJEC): 100 °C/W maximum at L = 0 inch NOTE 1: No Suffix type numbers are ±20% with guaranteed limits for only VZ, IR, and VF. Units with “A” suffix are ±10% with guaranteed limits for VZ, IR, and VF. Units with guaranteed limits for all six parameters are indicated by a “B” suffix for ±5.0% units, “C” suffix for ±2.0% and “D” suffix for ±1.0%. THERMAL IMPEDANCE: (ZθJX): 35°C/W maximum NOTE 2: Zener voltage is measured with the device junction in thermal equilibrium at an ambient temperature of 25°C ± 3°C. POLARITY: Diode to be operated with the banded (cathode) end positive. NOTE 3: Zener impedance is derived by superimposing on IZT A 60Hz rms a.c. current equal to 10% of IZT. NOTE 4: Reverse leakage currents are measured at VR as shown on the table. NOTE 5: ΔV Z is the maximum difference between VZ at IZT and VZ at IZL measured with the device junction in thermal equilibrium. MOUTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) of this device is approximately +6PPM/°C. The COE of the Mounting Surface System should be selected to provide a suitable match with this device. S F G1 G D |
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