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2N6849 Datasheet(PDF) 2 Page - Microsemi Corporation |
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2N6849 Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 4 page  TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 T4-LDS-0009 Rev. 2 (091456) Page 2 of 4 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge VGS = -10V, ID = -6.5A VDS = -50V Qg(on) Qgs Qgd 34.8 6.8 23.1 nC SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time ID = -6.5A, VGS = -10Vdc, Gate drive impedance = 7.5 Ω, VDD = -40Vdc td(on) tr td(off) tf 60 140 140 140 ns Diode Reverse Recovery Time di/dt ≤ -100A/µs, VDD ≤ -50V, IF = -6.5A trr 250 ns |
Similar Part No. - 2N6849_09 |
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Similar Description - 2N6849_09 |
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