D2010UK

Prelim.12/00

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

f = 1GHz

f = 1MHz

f = 1MHz

V

mA

µA

V

S

dB

%

—

pF

pF

pF

Drain–Source

Breakdown Voltage

Zero Gate Voltage

Drain Current

Gate Leakage Current

Forward Transconductance*

Common Source Power Gain

η

Drain Efficiency

VSWR

Load Mismatch Tolerance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

65

8

1

17

1.44

10

40

20:1

96

48

4

HAZARDOUS MATERIAL WARNING

The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly

toxic and care must be taken during handling and mounting to avoid damage to this area.

THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

Thermal Resistance Junction – Case

Max. 2.1°C / W

THERMAL DATA

* Pulse Test:

Pulse Duration = 300

µs , Duty Cycle ≤ 2%