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APT39M60J Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APT39M60J
Description  N-Channel MOSFET
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT39M60J Datasheet(HTML) 2 Page - Microsemi Corporation

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Static Characteristics
TJ = 25°C unless otherwise specified
Source-Drain Diode Characteristics
Dynamic Characteristics
TJ = 25°C unless otherwise specified
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T
J
= 25°C, L = 4.03mH, R
G
= 25
Ω, I
AS
= 28A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 C
o(cr)
is defined as a fixed capacitance with the same stored charge as C
OSS
with V
DS
= 67% of V
(BR)DSS
.
5 C
o(er)
is defined as a fixed capacitance with the same stored energy as C
OSS
with V
DS
= 67% of V
(BR)DSS
. To calculate C
o(er)
for any value of
V
DS
less than V
(BR)DSS,
use this equation: C
o(er)
= -1.10E-7/V
DS
^2 + 4.60E-8/V
DS
+ 1.72E-10.
6 R
G
is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
G
D
S
Unit
V
V/°C
Ω
V
mV/°C
µA
nA
Unit
A
V
ns
µC
V/ns
Unit
S
pF
nC
ns
Min
Typ
Max
600
0.57
0.09
0.11
3
4
5
-10
100
500
±100
Min
Typ
Max
42
210
1.0
745
19
8
Min
Typ
Max
55
11300
115
1040
550
285
280
60
120
65
75
190
60
Test Conditions
V
GS
= 0V
, I
D
= 250µA
Reference to 25°C, I
D
= 250µA
V
GS
= 10V
, I
D
= 28A
V
GS
= V
DS,
I
D
= 2.5mA
V
DS
= 600V
T
J
= 25°C
V
GS
= 0V
T
J
= 125°C
V
GS
= ±30V
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
I
SD
= 28A
, T
J
= 25°C, V
GS
= 0V
I
SD
= 28A 3
di
SD/
dt = 100A/µs, T
J
= 25°C
I
SD
28A, di/dt
≤1000A/µs, V
DD
= 100V,
T
J
= 125°C
Test Conditions
V
DS
= 50V
, I
D
= 28A
V
GS
= 0V
, V
DS
= 25V
f = 1MHz
V
GS
= 0V
, V
DS
= 0V to 400V
V
GS
= 0 to 10V
, I
D
= 28A,
V
DS
= 300V
Resistive Switching
V
DD
= 400V
, I
D
= 28A
R
G
= 2.2
Ω 6 , V
GG
= 15V
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Recovery dv/dt
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Symbol
V
BR(DSS)
ΔV
BR(DSS)
/
ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
/
ΔT
J
I
DSS
I
GSS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/dt
Symbol
g
fs
C
iss
C
rss
C
oss
C
o(cr)
4
C
o(er)
5
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
APT39M60J


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