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APT42F50S Datasheet(PDF) 2 Page - Microsemi Corporation |
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APT42F50S Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 4 page Static Characteristics TJ = 25°C unless otherwise specified Dynamic Characteristics TJ = 25°C unless otherwise specified Source-Drain Diode Characteristics 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T J = 25°C, L = 4.22mH, R G = 25 Ω, I AS = 21A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 C o(cr) is defined as a fixed capacitance with the same stored charge as C OSS with V DS = 67% of V (BR)DSS . 5 C o(er) is defined as a fixed capacitance with the same stored energy as C OSS with V DS = 67% of V (BR)DSS . To calculate C o(er) for any value of V DS less than V (BR)DSS, use this equation: C o(er) = -1.84E-7/V DS ^2 + 3.75E-8/V DS + 1.05E-10. 6 R G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. G D S Unit V V/°C Ω V mV/°C µA nA Unit S pF nC ns Unit A V ns µC A V/ns Min Typ Max 500 0.60 0.11 0.13 2.5 4 5 -10 250 1000 ±100 Min Typ Max 42 135 1.0 225 260 400 480 1.00 2.50 9.1 12.9 20 Min Typ Max 32 6810 90 735 425 215 170 38 80 29 35 80 26 Test Conditions V GS = 0V , I D = 250µA Reference to 25°C, I D = 250µA V GS = 10V , I D = 21A V GS = V DS, I D = 1mA V DS = 500V T J = 25°C V GS = 0V T J = 125°C V GS = ±30V Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) I SD = 21A , T J = 25°C, V GS = 0V T J = 25°C T J = 125°C I SD = 21A 3 T J = 25°C di SD/ dt = 100A/µs T J = 125°C V DD = 100V T J = 25°C T J = 125°C I SD ≤ 21A, di/dt ≤1000A/µs, V DD = 333V, T J = 125°C Test Conditions V DS = 50V , I D = 21A V GS = 0V , V DS = 25V f = 1MHz V GS = 0V , V DS = 0V to 333V V GS = 0 to 10V , I D = 21A, V DS = 250V Resistive Switching V DD = 333V , I D = 21A R G = 4.7 Ω 6 , V GG = 15V Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Symbol V BR(DSS) ΔV BR(DSS) / ΔT J R DS(on) V GS(th) ΔV GS(th) / ΔT J I DSS I GSS Symbol I S I SM V SD t rr Q rr I rrm dv/dt Symbol g fs C iss C rss C oss C o(cr) 4 C o(er) 5 Q g Q gs Q gd t d(on) t r t d(off) t f AP42F50B_S |
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