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APT60N60SCSG Datasheet(PDF) 2 Page - Microsemi Corporation |
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APT60N60SCSG Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 5 page Microsemi Reserves the right to change, without notice, the specifications and information contained herein. DYNAMIC CHARACTERISTICS APT60N60B_SCS(G) Symbol R θJC R θJA MIN TYP MAX 0.29 40 UNIT °C/W Characteristic Junction to Case Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Repetitive avalanche causes additional power losses that can be calculated as P AV = E AR*f 3 Starting T j = +25°C, L = 33.23mH, RG = 25Ω, Peak IL = 11A 4 Pulse Test: Pulse width < 380μs, Duty Cycle < 2% Symbol C iss C oss C rss Q g Q gs Q gd t d(on) t r t d(off) t f E on E off E on E off Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 5 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy Test Conditions V GS = 0V V DS = 25V f = 1 MHz V GS = 10V V DD = 400V I D = 44A @ 25°C RESISTIVE SWITCHING V GS = 15V V DD = 400V I D = 44A @ 25°C R G = 4.3Ω INDUCTIVE SWITCHING @ 25°C V DD = 400V, VGS = 15V I D = 44A, RG = 4.3Ω INDUCTIVE SWITCHING @ 125°C V DD = 400V, VGS = 15V I D = 44A, RG = 4.3Ω 5 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. 7 We do not recommend using this CoolMOS™ product in topologies that have fee wheeling load current conducted in the body diode that is hard commutated. The current commutation is very "snappy", resulting in high di/dt at the completion of commutation, and the likelihood of severe over-voltage transients due to the resulting high dv/dt. MIN TYP MAX 7200 8500 290 150 190 34 50 30 20 100 10 675 520 1100 635 UNIT pF nC ns μJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 4 (V GS = 0V, IS = -44A) Reverse Recovery Time (I S = -44A, dlS/dt = 100A/μs) Reverse Recovery Charge (I S = -44A, dlS/dt = 100A/μs) Peak Diode Recovery dv/dt 7 UNIT Amps Volts ns μC V/ns MIN TYP MAX 44 180 1.2 600 17 4 Symbol I S I SM V SD t rr Q rr dv/ dt THERMAL CHARACTERISTICS SINGLE PULSE 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 D = 0.9 0.05 Peak T J = P DM x Z θJC + TC Duty Factor D = t1/t 2 t2 t1 Note : |
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