Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-off Switching Energy

Turn-off Switching Energy

DYNAMIC CHARACTERISTICS

APT77N60JC3

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting T

/

I

V

V

DSS

T

6 Eon includes diode reverse recovery. See figures 18, 20.

7 Repetitve avalanche causes additional power losses that can be

calculated as

P

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Reverse Recovery Time (I

Reverse Recovery Charge (I

dt

5

UNIT

Amps

Volts

ns

μC

V/ns

MIN

TYP

MAX

77

231

1

1.2

861

46

6

Symbol

R

θJC

R

θJA

MIN

TYP

MAX

0.22

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

dt

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

on

E

off

Test Conditions

V

V

f = 1 MHz

V

V

I

RESISTIVE SWITCHING

V

V

I

R

INDUCTIVE SWITCHING @ 25°C

V

I

INDUCTIVE SWITCHING @ 125°C

V

I

MIN

TYP

MAX

13600

4400

290

505

640

48

240

18

27

110

165

8

12

1670

2880

2300

3100

UNIT

pF

nC

ns

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

THERMAL CHARACTERISTICS

SINGLE PULSE

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.25

0.20

0.15

0.10

0.05

0

0.5

0.1

0.3

0.7

0.9

0.05

Peak TJ = PDM x ZθJC + TC

Duty Factor D =

2

t2

t1

Note: