APT97N65B2_LC6

0

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.1

1

10

0.3

D = 0.9

0.7

SINGLE PULSE

RECTANGULAR PULSE DURATION (SECONDS)

Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

0.5

0.1

0.05

Peak TJ = PDM x ZθJC + TC

Duty Factor D =

2

t2

t1

Note:

DYNAMIC CHARACTERISTICS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

THERMAL CHARACTERISTICS

Symbol Characteristic

Test Conditions

MIN

TYP

MAX

UNIT

C

iss

Input Capacitance

V

V

f = 1 MHz

7650

pF

C

oss

Output Capacitance

5045

C

rss

Reverse Transfer Capacitance

550

Q

g

V

V

I

300

nC

Q

gs

Gate-Source Charge

50

Q

gd

Gate-Drain ("Miller") Charge

160

t

d(on)

Turn-on Delay Time

INDUCTIVE SWITCHING

V

V

I

R

25

ns

t

r

Rise Time

60

t

d(off)

Turn-off Delay Time

275

t

f

Fall Time

130

E

on

INDUCTIVE SWITCHING @ 25°C

V

I

2860

μJ

E

off

Turn-off Switching Energy

3500

E

on

INDUCTIVE SWITCHING @ 125°C

V

I

4030

E

off

Turn-off Switching Energy

3695

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

I

S

Continuous Source Current (Body Diode)

97

Amps

I

SM

291

V

SD

0.9

1.2

Volts

dv

/

dt

dt

7

50

V/ns

t

rr

Reverse Recovery Time

(I

di

/

T

790

ns

Q

rr

Reverse Recovery Charge

(I

di

/

T

19

μC

I

RRM

Peak Recovery Current

(I

di

/

T

43

Amps

Symbol

Characteristic

MIN

TYP

MAX

UNIT

R

θJC

Junction to Case

0.145

°C/W

R

θJA

Junction to Ambient

40

1 Continuous current limited by package lead temperature.

2 Repetitive Rating: Pulse width limited by maximum junction temperature

3 Repetitive avalanche causes additional power losses that can be calculated as

PAV = EAR*f . Pulse width tp limited by Tj max.

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

4 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%

5 See MIL-STD-750 Method 3471

6 Eon includes diode reverse recovery.

7 Maximum 125°C diode commutation speed = di/dt 600A/μs