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APTGL180A120T3AG Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTGL180A120T3AG Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 5 page  APTGL180A120T3AG www.microsemi.com 2- 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 300 µA Tj = 25°C 1.8 2.2 VCE(sat) Collector Emitter saturation Voltage VGE = 15V IC = 150A Tj = 150°C 2.2 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 5.5 mA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 200 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 9.3 Coes Output Capacitance 0.58 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 0.5 nF QG Gate charge VGE= -8V / 15V ; VCE=600V IC=150A 0.85 µC Td(on) Turn-on Delay Time 130 Tr Rise Time 20 Td(off) Turn-off Delay Time 300 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 150A RG = 3Ω 45 ns Td(on) Turn-on Delay Time 150 Tr Rise Time 35 Td(off) Turn-off Delay Time 350 Tf Fall Time Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 150A RG = 3Ω 80 ns Eon Turn-on Switching Energy TJ = 150°C 13.5 mJ Eoff Turn-off Switching Energy VGE = ±15V VCE = 600V IC = 150A RG = 3Ω TJ = 150°C 14.5 mJ Isc Short Circuit data VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C 600 A Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 150 IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 600 µA IF DC Forward Current Tc = 100°C 120 A IF = 120A 2.5 3 IF = 240A 3 VF Diode Forward Voltage IF = 120A Tj = 125°C 1.8 V Tj = 25°C 265 trr Reverse Recovery Time Tj = 125°C 350 ns Tj = 25°C 1120 Qrr Reverse Recovery Charge IF = 120A VR = 800V di/dt =400A/µs Tj = 125°C 5780 nC |
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