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D2224UK Datasheet(PDF) 2 Page - Seme LAB

Part # D2224UK
Description  METAL GATE RF SILICON FET
Download  2 Pages
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Manufacturer  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

D2224UK Datasheet(HTML) 2 Page - Seme LAB

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D2224UK
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 5/99
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Drain–Source
BVDSS
Breakdown Voltage
Zero Gate Voltage
IDSS
Drain Current
IGSS
Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs
Forward Transconductance*
GPS
Common Source Power Gain
η
Drain Efficiency
VSWR
Load Mismatch Tolerance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS = 0
ID = 10mA
VDS = 12.5V
VGS = 0
VGS = 20V
VDS = 0
ID = 10mA
VDS = VGS
VDS = 10V
ID = 0.8A
PO = 5W
VDS = 7.2V
IDQ = 0.4A
f = 850MHz
VDS = 0V
VGS = –5V f = 1MHz
VDS = 12.5V VGS = 0
f = 1MHz
VDS = 12.5V VGS = 0
f = 1MHz
V
mA
µA
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS (T
case = 25°C unless otherwise stated)
40
1
4
0.5
7
0.72
7
50
20:1
48
40
4
RTHj–case
Thermal Resistance Junction – Case
Max. 6°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
µs , Duty Cycle ≤ 2%


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