D2230UK

Prelim. 2/99

Power Dissipation

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

Storage Temperature

Maximum Operating Junction Temperature

17.5W

40V

±20V

4A

–65 to 150°C

200°C

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

5W – 12.5V – 1GHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 10 dB MINIMUM

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 2 GHz

METAL GATE RF SILICON FET

TetraFET

MECHANICAL DATA

Dimensions in mm.

1

2

3

4

3.00

2 PL.

2.07

2 PL.

2 PL.

0.47

0.47

2 PL.

0.10

TYP.

0.381

1.65

2 PL.

5.50 ± 0.15

1.27 ± 0.05

2 PL.

1.27

1.27

0.10 R.

TYP.

0.10

TYP.

6.50 ±

0.15

0.3 R.

4 PL.

1.27

0.80

4 PL.

8

7

6

5

4.90 ± 0.15

0.508

0.360

± 0.005

2.313

± 0.2

F-0127 PACKAGE

PIN 1 – SOURCE

PIN 2 – DRAIN

PIN 3 – DRAIN

PIN 4 – SOURCE

PIN 5 – SOURCE

PIN 6 – GATE

PIN 7 – GATE

PIN 8 – SOURCE

Ceramic Material: Alumina.

Parts can also be supplied with AlN or BeO for

improved thermal resistance.

Contact Semelab for details.