D2253 datasheet(1/2 Pages) SEME-LAB

Part #	D2253

Description	METAL GATE RF SILICON FET

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Manufacturer	SEME-LAB [Seme LAB]

Direct Link	http://www.semelab.co.uk

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D2253UK

Prelim. 9/00

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

PD

Power Dissipation

BVDSS

Drain – Source Breakdown Voltage *

BVGSS

Gate – Source Breakdown Voltage *

ID(sat)

Drain Current *

Tstg

Storage Temperature

Tj

Maximum Operating Junction Temperature

15W

40V

±20V

2A

–65 to 150°C

200°C

MECHANICAL DATA

A

F

E

B

D

C

G

H

I

P

M

N

O

J

K

L

1

2

3

4

5

6

7

8

Q

R

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

5W – 12.5V – 1GHz

PUSH–PULL

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• VERY LOW Crss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 10 dB MINIMUM

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

APPLICATIONS

• VHF/UHF COMMUNICATIONS

from 1MHz to 1 GHz

METAL GATE RF SILICON FET

TetraFET

* Per Side

PIN 1 Source (Common)

PIN 2 Drain 1

PIN 3 Drain 2

PIN 4 Source (Common)

PIN 5 Source (Common)

PIN 6 Gate 2

PIN 7 Gate 1

PIN 8 Source (Common)

DBC4 Package

DIM

mm

Tol.

Inches

Tol.

A

6.47

0.08

.255

.003

B

0.76

0.08

.030

.003

C

45°

5°

45

°

5°

D

0.76

0.08

.030

.003

E

1.14

0.08

.045

.003

F

2.67

0.08

.105

.003

G

11.73

0.13

.462

.005

H

8.43

0.08

.332

.003

I

7.92

0.08

.312

.003

J

0.20

0.02

.008

.001

K

0.64

0.02

.025

.001

L

0.30

0.02

.012

.001

M

3.25

0.08

.128

.003

N

2.11

0.08

.083

.003

O

6.35SQ

0.08

.250SQ

.003

P

1.65

0.51

.065

.020

Q

0.13

max

.005

max

R

0.25

0.07

0.010

.003

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