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KTD1304 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part No. KTD1304
Description  NPN Plastic Encapsulated Transistor
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Maker  SECOS [SeCoS Halbleitertechnologie GmbH]
Homepage  http://www.secosgmbh.com
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Elektronische Bauelemente
KTD1304
0.3 A, 25 V
NPN Plastic Encapsulated Transistor
01-June-2005 Rev. A
Page 1 of 2
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
High emitter-base voltage: VEBO=12V(Min)
low on resistance: Ron=0.6Ω(max)(IB=1mA)
PACKAGE DIMENSIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
20
V
Emitter to Base Voltage
VEBO
12
V
Collector Current - Continuous
IC
300
mA
Collector Power Dissipation
Pc
200
mW
Junction, Storage Temperature
TJ, TSTG
+150, -55 ~ +150
CHARACTERISTICS at Ta = 25°C
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
25
-
-
V
IC = 100 uA
BVCEO
20
-
-
V
IC = 1 mA
BVEBO
12
-
-
V
IE = 100 uA
ICBO
-
-
0.1
uA
VCB = 25 V
IEBO
-
-
0.1
uA
VEB = 12 V
hFE1 (FORWARD)
200
-
1000
VCE = 2 V, IC=4 mA
hFE1 (REVERSE)
20
-
-
VCE = 2 V, IC=4 mA
VCE(sat)
-
-
0.25
V
IC =100 mA, IB=10 mA
VBE(sat)
-
-
1
V
IC =100 mA, IB=10 mA
fT
-
60
-
MHz
VCE = 10 V, IC = 1 mA, f = 100 MHz
COB
-
10
-
pF
VCB = 10 V, IE = 0, f = 1 MHz
R(ON)
-
0.6
-
Ω
VIN=0.3 V, IB=1mA, f=1KHz
Collector
Base
Emitter
Dim
Min
Max
A
2.800
3.040
B
1.200
1.400
C
0.890
1.110
D
0.370
0.500
G
1.780
2.040
H
0.013
0.100
J
0.085
0.177
K
0.450
0.600
L
0.890
1.020
S
2.100
2.500
V
0.450
0.600
All Dimension in mm
SOT-23
K
J
C
H
L
A
B S
G
V
3
1
2
D
Top View
1
2
3




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