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ARF477FL Datasheet(PDF) 1 Page - Microsemi Corporation |
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ARF477FL Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 4 page MAXIMUM RATINGS All Ratings: T C = 25°C unless otherwise specified. RF POWER MOSFET N - CHANNEL PUSH - PULL PAIR 165V 400W 100MHz The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 100 MHz. • Specified 150 Volt, 65 MHz Characteristics: • Output Power = 400 Watts • Gain = 15dB (Class AB) • Efficiency = 50% min • High Performance Push-Pull RF Package. • High Voltage Breakdown and Large SOA for Superior Ruggedness. • Low Thermal Resistance. • RoHS Compliant ARF477FL Common Source Push-Pull Pair G G D S S S S D Microsemi Website - http://www.microsemi.com ARF477FL Symbol Parameter Ratings Unit V DSS Drain-Source Voltage 500 V V DGO Drain-Gate Voltage 500 I D Continuous Drain Current @ T C = 25°C (each device) 15 A V GS Gate-Source Voltage ±30 V P D Total Power Dissipation @ T C = 25°C 750 W T J, TSTG Operating and Storage Junction Temperature Range -55 to 175 °C T L Lead Temperature: 0.063” from Case for 10 Sec. 300 Static Electrical Characteristics Symbol Parameter Min Typ Max Unit BV DSS Drain-Source Breakdown Voltage (V GS = 0V, ID = 250 μA) 500 V V DS(ON) On State Drain Voltage 1 (I D(ON) = 7.5A, VGS = 10V) 2.9 4 I DSS Zero Gate Voltage Drain Current (V DS = VDSS, VGS = 0V) 25 μA Zero Gate Voltage Drain Current (V DS = 50VDSS, VGS = 0, TC = 125°C) 250 I GSS Gate-Source Leakage Current (V GS = ±30V, VDS = 0V) ±100 nA g fs Forward Transconductance (V DS = 15V, ID = 7.5A) 3.5 5.6 8 mhos g fs1/gfa2 Forward Transconductance Match Ratio (V DS = 15V, ID = 5A) 0.9 1.1 V GS(TH) Gate Threshold Voltage (V DS = VGS, ID = 50mA) 35 V GS(TH) Gate Threshold Voltage Match (V DS = VGS, ID = 50mA) 0.2 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Symbol Parameter Min Typ Max Unit R θJC Junction to Case 0.18 0.2 °C/W R θJHS Junction to Sink (High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) 0.30 0.32 Thermal Characteristics |
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Similar Description - ARF477FL_10 |
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