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MMBT3906W Datasheet(PDF) 5 Page - SeCoS Halbleitertechnologie GmbH |
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MMBT3906W Datasheet(HTML) 5 Page - SeCoS Halbleitertechnologie GmbH |
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5 / 5 page  Any changing of specification will not be informed individual MMBT3906W PNP Silicon General Purpose Transistor TYPICAL STATIC CHARACTERISTICS Figure 13. DC Current Gain IC, Collector Current (mA) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 VCE = 1.0 V TJ = +125°C +25°C –55°C Figure 14. Collector Saturation Region IB, Base Current (mA) 0.4 0.6 0.8 1.0 0.2 0.1 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 IC = 1.0 mA TJ = 25°C 0.07 0.05 0.03 0.02 0.01 10 mA 30 mA 100 mA Figure 15. “ON” Voltages IC, Collector Current (mA) 0.4 0.6 0.8 1.0 0.2 Figure 16. Temperature Coefficients IC, Collector Current (mA) 1.0 2.0 5.0 10 20 50 0 100 –0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 200 –1.0 –1.5 –2.0 200 TJ = 25°C VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V +25°C TO +125°C –55°C TO +25°C +25°C TO +125°C –55°C TO +25°C qVC FOR VCE(sat) qVB FOR VBE(sat) http://www.SeCoSGmbH.com Elektronische Bauelemente 01-Jun-2004 Rev. B Page 5 of 5 |
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