MMBT4401W datasheet(2/5 Pages) SECOS

Part #	MMBT4401W

Description	Switching Transistor

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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MMBT4401W

NPN Silicon

Switching Transistor

ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(3)

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 150 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 2.0 Vdc)

hFE

20

40

80

100

40

—

300

—

Collector – Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat)

—

0.4

0.75

Vdc

Base – Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat)

0.75

—

0.95

1.2

Vdc

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)

fT

250

—

MHz

Collector–Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Ccb

—

6.5

pF

Emitter–Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Ceb

—

30

pF

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hie

1.0

15

k

Ω

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hre

0.1

8.0

X 10–4

Small – Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

40

500

—

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hoe

1.0

30

mmhos

SWITCHING CHARACTERISTICS

Delay Time

(VCC = 30 Vdc, VEB = 2.0 Vdc,

td

—

15

ns

Rise Time

( CC

,

EB

,

IC = 150 mAdc, IB1 = 15 mAdc)

tr

—

20

ns

Storage Time

(VCC = 30 Vdc, IC = 150 mAdc,

ts

—

225

ns

Fall Time

( CC

, C

,

IB1 = IB2 = 15 mAdc)

tf

—

30

ns

3. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

Figure 1. Turn–On Time

Figure 2. Turn–Off Time

SWITCHING TIME EQUIVALENT TEST CIRCUITS

Scope rise time < 4.0 ns

*Total shunt capacitance of test jig connectors, and oscilloscope

+16 V

– 2.0 V

< 2.0 ns

0

1.0 to 100

µs,

DUTY CYCLE

≈ 2.0%

1.0 k

Ω

+ 30 V

200

Ω

CS* < 10 pF

+16 V

–14 V

0

< 20 ns

1.0 to 100

µs,

DUTY CYCLE

≈ 2.0%

1.0 k

Ω

+ 30 V

200

Ω

CS* < 10 pF

– 4.0 V

http://www.SeCoSGmbH.com

Elektronische Bauelemente

01-Jun-2002 Rev. A

Page 2 of 5

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