LX5510

Microsemi

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 3

Copyright

© 2000

Rev. 1.0d 2005-08-18

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

TM

®

ELECTRICAL CHA RACTERISTICS

LX5510

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

SECTION HEADER

Frequency Range

f

2.4

2.5

GHz

Power Gain at Pout = 19dBm

Gp

20

dB

EVM at Pout = 19dBm

64GQAM / 54Mbps

3.0

%

Total Current at Pout = 19dBm

Ic_total

125

mA

Quiescent Current

Icq

65

mA

Bias Control Reference Current

Iref

For Icq = 65mA

1.2

mA

Small-Signal Gain

S21

20

dB

Gain Flatness

ΔS21

Over 100MHz

1

dB

Gain Variation Over Temperature

ΔS21

0°C to +70°C

1

dB

Input Return Loss

S11

10

dB

Output Return Loss

S22

10

dB

Reverse Isolation

S12

-40

dB

Second Harmonic

Pout = 19dBm

-55

dBc

Third Harmonic

Pout = 19dbm

-55

dBc

Total Current at Pout=23dBm

11 Mbps CCK

180

mA

2

11 Mbps CCK

-52

dBc

Ramp-On Time

10 ~ 90%

100

ns

Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink.