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LX5510 Datasheet(PDF) 3 Page - Microsemi Corporation |
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LX5510 Datasheet(HTML) 3 Page - Microsemi Corporation |
3 / 9 page LX5510 PRODUCTION DATA SHEET Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 Copyright © 2000 Rev. 1.0d 2005-08-18 InGaP HBT 2.4 – 2.5 GHz Power Amplifier TM ® ELECTRICAL CHA RACTERISTICS Test conditions: Vc = 3.3V, Vref = 2.85V, Icq = 65mA, TA = 25°C, unless otherwise specified LX5510 Parameter Symbol Test Conditions Min Typ Max Units SECTION HEADER Frequency Range f 2.4 2.5 GHz Power Gain at Pout = 19dBm Gp 20 dB EVM at Pout = 19dBm 64GQAM / 54Mbps 3.0 % Total Current at Pout = 19dBm Ic_total 125 mA Quiescent Current Icq 65 mA Bias Control Reference Current Iref For Icq = 65mA 1.2 mA Small-Signal Gain S21 20 dB Gain Flatness ΔS21 Over 100MHz 1 dB Gain Variation Over Temperature ΔS21 0°C to +70°C 1 dB Input Return Loss S11 10 dB Output Return Loss S22 10 dB Reverse Isolation S12 -40 dB Second Harmonic Pout = 19dBm -55 dBc Third Harmonic Pout = 19dbm -55 dBc Total Current at Pout=23dBm 11 Mbps CCK 180 mA 2 nd side lobe at 23 dBm 11 Mbps CCK -52 dBc Ramp-On Time tON 10 ~ 90% 100 ns Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink. |
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