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SEF101MH Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SEF101MH Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 3 page SEF101MH~SEF107MH VOLTAGE 50 ~ 1000 V 1.0 Amp High Efficiency Recovery Rectifiers Elektronische Bauelemente 09-Feb-2011 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Part Number Unit Testing Condition SEF 101 MH SEF 102 MH SEF 103 MH SEF 104 MH SEF 105 MH SEF 106 MH SEF 107 MH Forward Voltage (Max.) VF 1 1.3 1.7 V Average Forward Rectified Current (Max.) IO 1 A Ambient Temperature =50°C Forward Surge Current IFSM 25 A 8.3ms single half sine-wave superimposed on rated load (JEDEC method) DC Reverse Current at Rated DC Blocking Voltage (Max.) IR 5 A VR=VRRM, TA=25°C 150 VR=VRRM,TA=100°C Thermal Resistance Junction to Ambient (Typ.) RJA 42 °C/W Diode Junction Capacitance (Typ.) CJ 70 pF f=1MHz and applied 4V DC reverse voltage Storage and Operating Temperature Range TSTG, TJ -65 ~ 175, -55 ~ 150 °C Reverse recovery time TRR 50 75 nS |
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