BSM150GB170DN2 datasheet(1/10 Pages) EUPEC

Part #	BSM150GB170DN2

Description	IGBT Power Module

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Manufacturer	EUPEC [eupec GmbH]

Direct Link	http://www.eupec.com

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Oct-27-1997

BSM 150 GB 170 DN2

IGBT Power Module

• Half-bridge

• Including fast free-wheeling diodes

• Package with insulated metal base plate

• RG on,min = 10 Ohm

Type

VCE

IC

Package

Ordering Code

BSM 150 GB 170 DN2

1700V 220A

HALF-BRIDGE 2

C67070-A2704-A67

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

VCE

1700

V

Collector-gate voltage

RGE = 20 kΩ

VCGR

1700

Gate-emitter voltage

VGE

± 20

DC collector current

TC = 25 °C

TC = 80 °C

IC

150

220

A

Pulsed collector current, tp = 1 ms

TC = 25 °C

TC = 80 °C

ICpuls

300

440

Power dissipation per IGBT

TC = 25 °C

Ptot

1250

W

Chip temperature

Tj

+ 150

°C

Storage temperature

Tstg

-40 ... + 125

Thermal resistance, chip case

RthJC

≤ 0.1

K/W

Diode thermal resistance, chip case

RthJCD

≤ 0.32

Insulation test voltage, t = 1min.

Vis

4000

Vac

Creepage distance

-

20

mm

Clearance

-

11

DIN humidity category, DIN 40 040

-

F

sec

IEC climatic category, DIN IEC 68-1

-

40 / 125 / 56

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BSM150GB170DN2 Datasheet(PDF) 1 Page - eupec GmbH

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