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BSM150GB170DN2 Datasheet(PDF) 1 Page - eupec GmbH |
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BSM150GB170DN2 Datasheet(HTML) 1 Page - eupec GmbH |
1 / 10 page 1 Oct-27-1997 BSM 150 GB 170 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 10 Ohm Type VCE IC Package Ordering Code BSM 150 GB 170 DN2 1700V 220A HALF-BRIDGE 2 C67070-A2704-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1700 V Collector-gate voltage RGE = 20 kΩ VCGR 1700 Gate-emitter voltage VGE ± 20 DC collector current TC = 25 °C TC = 80 °C IC 150 220 A Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C ICpuls 300 440 Power dissipation per IGBT TC = 25 °C Ptot 1250 W Chip temperature Tj + 150 °C Storage temperature Tstg -40 ... + 125 Thermal resistance, chip case RthJC ≤ 0.1 K/W Diode thermal resistance, chip case RthJCD ≤ 0.32 Insulation test voltage, t = 1min. Vis 4000 Vac Creepage distance - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F sec IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56 |
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