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IRFY340 Datasheet(PDF) 1 Page - Seme LAB |
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IRFY340 Datasheet(HTML) 1 Page - Seme LAB |
1 / 2 page IRFY340 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 5/98 VGS Gate – Source Voltage ID Continuous Drain Current (VGS = 0 , Tcase = 25°C) ID Continuous Drain Current (VGS = 0 , Tcase = 100°C) IDM Pulsed Drain Current 1 PD Power Dissipation @ Tcase = 25°C Linear Derating Factor TJ , Tstg Operating and Storage Temperature Range TL Package Mounting Surface Temperature (for 5 sec) RθJC Thermal Resistance Junction to Case ±20V 6.9A 4.4A 27A 60W 0.48W/°C –55 to 150°C 300°C 2.1°C/W max. MECHANICAL DATA Dimensions in mm (inches) 2.54 BSC 10.41 10.67 3.56 3.81 Dia. 0.70 0.90 2.65 2.75 0.89 1.14 4.70 5.00 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) TO–220M – Metal Package Notes 1) Pulse Test: Pulse Width ≤ 300ms, δ≤ 2% N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS FEATURES • HERMETICALLY SEALED TO–220 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • SCREENING OPTIONS AVAILABLE • ALL LEADS ISOLATED FROM CASE Pad 1 – Gate Pad 2 – Drain Pad 3 – Source VDSS 400V ID(cont) 6.9A RDS(on) 0.55 Ω Ω |
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