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CS200HP Datasheet(PDF) 1 Page - Fujitsu Component Limited. |
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CS200HP Datasheet(HTML) 1 Page - Fujitsu Component Limited. |
1 / 2 page 65nm CMOS Standard Cell CS200 ASIC Series Description STD-Tr k STD-Tr HS-Tr HV-Tr Mo C UHS-Tr High Performance Lineup CS200 High Performance Lineup CS200HP Low Power Lineup CS200A Low Power Lineup CS200LL UHS: Ultra High Speed, HS: High Speed STD: Standard, LL: Low Leakage Speed Fast D- D- D- HS-Tr STD-Tr HV-Tr High End Server Digital Consumer Cellular Phone Mobile Computing Server/ Network UHS-Tr HS-Tr STD-Tr LL-Tr Features • High integration –Transistor of 30–50nm gate length (ITRS road map 65nm) – 12-layer fine pitch, copper wiring, and low-K insulating material techniques – Maximum 180 million gates, nearly twice that of 90nm technology – 50% reduction in SRAM cell size – 30% increase in performance over 90nm •Low power consumption/low leakage current • I/O with pad structure with fine pad pitch technology for chip size reduction • High-speed library and low-power library available – High speed: CS200HP –Low leak: CS200L • Higher performance, gate propagation delay tpd = 4.4ps (@1.2V, inverter, and F/O = 1, CS200HP) • Compiled memory macros: 1T and 6T SRAMs, and ROM •Application specific IPs – Computational cores: ARM7, 9, 11, Communication and Digital-AV DSP – Mixed signals: Wide range of ADCs and DACs – HSIF logics: PCI-Express, XAUI, SATA, DDR, USB, HDMI • High-speed interface SerDes macros (~10Gbps data rate) •Wide range of PLLs: standard to high-speed 1.6GHz • Standard I/Os: LVTTL, SSTL, HSTL, LVDS, P-CML •Wide supply voltage (0.80V to 1.30V for core) •Triple Vth Transistor options •Various packages available (QFP, FBGA, EBGA, PBGA, FC-BGA) • Design methodology and support – Methodology in place to support multi-million-gates hierarchical designs –Excellent design center support at Sunnyvale and Dallas –Worldwide service organizations for global support CS200 Series, 65nm standard cells CMOS process technology, addresses the design challenges of the PDA and mobile computing market in low power and multi-functionality. It also addresses the need of ultra high performance design in leading-edge networking, server computing, and in complex telecom equipment applications. 65nm technology is available in 300mm fabrication and supports high volume wafer capacity in multiple manufacturing locations. |
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