FUJITSU SEMICONDUCTOR

DATA SHEET

Copyright©2010-2011 FUJITSU SEMICONDUCTOR LIMITED All rights reserved

2011.6

Memory FRAM

128 K (16 K

MB85RC128

■ DESCRIPTION

The MB85RC128 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration

of 16,384 words

× 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for

forming the nonvolatile memory cells.

The MB85RC128 adopts the two-wire serial interface.

Unlike SRAM, the MB85RC128 is able to retain data without using a data backup battery.

The read/write endurance of the nonvolatile memory cells used for the MB85RC128 has improved to be at

The MB85RC128 does not need a polling sequence after writing to the memory such as the case of Flash

■ FEATURES

• Bit configuration

: 16,384 words

× 8 bits

• Operating power supply voltage : 2.7 V to 3.6 V

• Operating frequency

: 400 kHz (Max)

• Two-wire serial interface

Fast-mode.

Fully controllable by two ports: serial clock (SCL) and serial data (SDA).

• Operating temperature range

:

− 40 °C to +85 °C

• Data retention

: 10 years (

+ 75 °C)

• Read/write endurance

• Package

: Plastic / SOP, 8-pin (FPT-8P-M02)

• Low power consumption

: Operating current 0.15 mA (Max: @400 kHz), Standby current 5

μA (Typ)

DS05–13110–3E