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CY7C1444AV33 Datasheet(PDF) 8 Page - Cypress Semiconductor

Part # CY7C1444AV33
Description  36-Mbit (1 M x 36/2 M x 18) Pipelined DCD Sync SRAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1444AV33 Datasheet(HTML) 8 Page - Cypress Semiconductor

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CY7C1444AV33
CY7C1445AV33
Document Number: 38-05352 Rev. *H
Page 8 of 29
The address presented is loaded into the address register and
the address advancement logic while being delivered to the
memory core. The ADV input is ignored during this cycle. If a
global write is conducted, the data presented to the DQX is
written into the corresponding address location in the memory
core. If a byte write is conducted, only the selected bytes are
written. Bytes not selected during a byte write operation will
remain unaltered. A synchronous self-timed write mechanism
has been provided to simplify the write operations.
Because the CY7C1444AV33/CY7C1445AV33 is a common I/O
device, the output enable (OE) must be deasserted HIGH before
presenting data to the DQX inputs. Doing so will tri-state the
output drivers. As a safety precaution, DQX are automatically
tri-stated whenever a write cycle is detected, regardless of the
state of OE.
Burst Sequences
The CY7C1444AV33/CY7C1445AV33 provides a two-bit
wraparound counter, fed by A[1:0], that implements either an
interleaved or linear burst sequence. The interleaved burst
sequence is designed specifically to support Intel Pentium
applications. The linear burst sequence is designed to support
processors that follow a linear burst sequence. The burst
sequence is user selectable through the MODE input. Both read
and write burst operations are supported.
Asserting ADV LOW at clock rise will automatically increment the
burst counter to the next address in the burst sequence. Both
read and write burst operations are supported.
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ places
the SRAM in a power conservation “sleep” mode. Two clock
cycles are required to enter into or exit from this “sleep” mode.
While in this mode, data integrity is guaranteed. Accesses
pending when entering the “sleep” mode are not considered valid
nor is the completion of the operation guaranteed. The device
must be deselected prior to entering the “sleep” mode. CEs,
ADSP, and ADSC must remain inactive for the duration of tZZREC
after the ZZ input returns LOW.
Interleaved Burst Address Table
(MODE = Floating or VDD)
First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
Fourth
Address
A1: A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Linear Burst Address Table (MODE = GND)
First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
Fourth
Address
A1: A0
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
Min
Max
Unit
IDDZZ
Sleep mode standby current
ZZ > VDD– 0.2 V
100
mA
tZZS
Device operation to ZZ
ZZ > VDD – 0.2 V
2tCYC
ns
tZZREC
ZZ recovery time
ZZ < 0.2 V
2tCYC
–ns
tZZI
ZZ active to sleep current
This parameter is sampled
2tCYC
ns
tRZZI
ZZ inactive to exit sleep current
This parameter is sampled
0
ns
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