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SML50B30 Datasheet(PDF) 1 Page - Seme LAB |
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1 / 5 page SML50B30 8/99 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS 1 3 2 3.55 (0.140) 3.81 (0.150) 0.40 (0.016) 0.79 (0.031) 2.21 (0.087) 2.59 (0.102) 1.01 (0.040) 1.40 (0.055) 15.49 (0.610) 16.26 (0.640) 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 1.65 (0.065) 2.13 (0.084) 5.25 (0.215) BSC 2.87 (0.113) 3.12 (0.123) TO–247AD Package Outline. Dimensions in mm (inches) Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500 30 120 ±20 ±30 370 2.96 –55 to 150 300 30 30 1300 V A A V W W/°C °C A mJ ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 2.89mH, RG = 25W, Peak IL = 30A VDSS 500V ID(cont) 30A RDS(on) 0.170W W W W Pin 1 – Gate Pin 2 – Drain Pin 3 – Source • Faster Switching • Lower Leakage • 100% Avalanche Tested • Popular TO–247 Package StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. D S G |
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