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CY14B104NA-ZSP45XI Datasheet(PDF) 1 Page - Cypress Semiconductor

Part # CY14B104NA-ZSP45XI
Description  4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY14B104NA-ZSP45XI Datasheet(HTML) 1 Page - Cypress Semiconductor

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CY14B104LA, CY14B104NA
4-Mbit (512 K × 8/256 K × 16) nvSRAM
Cypress Semiconductor Corporation
198 Champion Court
San Jose
, CA 95134-1709
408-943-2600
Document #: 001-49918 Rev. *I
Revised July 12, 2011
4-Mbit (512 K × 8/256 K × 16) nvSRAM
Features
20 ns, 25 ns, and 45 ns access times
Internally organized as 512 K × 8 (CY14B104LA) or 256 K × 16
(CY14B104NA)
Hands off automatic STORE on power-down with only a small
capacitor
STORE to QuantumTrap non-volatile elements initiated by
software, device pin, or AutoStore on power-down
RECALL to SRAM initiated by software or power-up
Infinite read, write, and recall cycles
1 million STORE cycles to QuantumTrap
20 year data retention
Single 3 V +20, –10 operation
Industrial temperature
Packages
44-/54-pin thin small outline package (TSOP) Type II
48-ball fine-pitch ball grid array (FBGA)
Pb-free and restriction of hazardous substances (RoHS)
compliant
Functional Description
The Cypress CY14B104LA/CY14B104NA is a fast static RAM
(SRAM), with a non-volatile element in each memory cell. The
memory is organized as 512 K bytes of 8 bits each or 256 K
words of 16 bits each. The embedded non-volatile elements
incorporate QuantumTrap technology, producing the world’s
most reliable non-volatile memory. The SRAM provides infinite
read and write cycles, while independent non-volatile data
resides in the highly reliable QuantumTrap cell. Data transfers
from the SRAM to the non-volatile elements (the STORE
operation) takes place automatically at power-down. On
power-up, data is restored to the SRAM (the RECALL operation)
from the non-volatile memory. Both the STORE and RECALL
operations are also available under software control.
STATIC RAM
ARRAY
2048 X 2048
R
O
W
D
E
C
O
D
E
R
COLUMN I/O
COLUMN DEC
I
N
P
U
T
B
U
F
F
E
R
S
POWER
CONTROL
STORE/RECALL
CONTROL
Quatrum Trap
2048 X 2048
STORE
RECALL
V
CC
V
CAP
HSB
A
9 A10
A
11 A12 A13 A14 A15 A16
SOFTWARE
DETECT
A
14 - A2
OE
CE
WE
BHE
BLE
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
17
A
18
DQ
0
DQ
1
DQ
2
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
DQ
8
DQ
9
DQ
10
DQ
11
DQ
12
DQ
13
DQ
14
DQ
15
Logic Block Diagram [1, 2, 3]
Notes
1. Address A0–A18 for × 8 configuration and Address A0–A17 for × 16 configuration.
2. Data DQ0–DQ7 for × 8 configuration and Data DQ0–DQ15 for × 16 configuration.
3. BHE and BLE are applicable for × 16 configuration only.
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